Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon.
Identifieur interne : 001907 ( Main/Exploration ); précédent : 001906; suivant : 001908Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon.
Auteurs : RBID : pubmed:21389511Abstract
The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the interaction between the substrate and the overlayer strongly influences the formation of quantum well states; indium layers only exhibit well defined quantum well states when the layer relaxes from an initial face-centred cubic to the bulk body-centred tetragonal lattice structure. For Pb layers on Si(100) a change in growth orientation inhibits the formation of quantum well states in films thicker than 2 ML.
DOI: 10.1088/0953-8984/22/13/135008
PubMed: 21389511
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon.</title><author><name sortKey="Dil, J H" uniqKey="Dil J">J H Dil</name><affiliation wicri:level="3"><nlm:affiliation>Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin, Germany. jan-hugo.dil@psi.ch</nlm:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="H Lsen, B" uniqKey="H Lsen B">B Hülsen</name></author><author><name sortKey="Kampen, T U" uniqKey="Kampen T">T U Kampen</name></author><author><name sortKey="Kratzer, P" uniqKey="Kratzer P">P Kratzer</name></author><author><name sortKey="Horn, K" uniqKey="Horn K">K Horn</name></author></titleStmt><publicationStmt><date when="2010">2010</date><idno type="doi">10.1088/0953-8984/22/13/135008</idno><idno type="RBID">pubmed:21389511</idno><idno type="pmid">21389511</idno><idno type="wicri:Area/Main/Corpus">001523</idno><idno type="wicri:Area/Main/Curation">001523</idno><idno type="wicri:Area/Main/Exploration">001907</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the interaction between the substrate and the overlayer strongly influences the formation of quantum well states; indium layers only exhibit well defined quantum well states when the layer relaxes from an initial face-centred cubic to the bulk body-centred tetragonal lattice structure. For Pb layers on Si(100) a change in growth orientation inhibits the formation of quantum well states in films thicker than 2 ML.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21389511</PMID><DateCreated><Year>2011</Year><Month>03</Month><Day>10</Day></DateCreated><DateCompleted><Year>2011</Year><Month>07</Month><Day>29</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-648X</ISSN><JournalIssue CitedMedium="Internet"><Volume>22</Volume><Issue>13</Issue><PubDate><Year>2010</Year><Month>Apr</Month><Day>7</Day></PubDate></JournalIssue><Title>Journal of physics. Condensed matter : an Institute of Physics journal</Title><ISOAbbreviation>J Phys Condens Matter</ISOAbbreviation></Journal><ArticleTitle>Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon.</ArticleTitle><Pagination><MedlinePgn>135008</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0953-8984/22/13/135008</ELocationID><Abstract><AbstractText>The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the interaction between the substrate and the overlayer strongly influences the formation of quantum well states; indium layers only exhibit well defined quantum well states when the layer relaxes from an initial face-centred cubic to the bulk body-centred tetragonal lattice structure. For Pb layers on Si(100) a change in growth orientation inhibits the formation of quantum well states in films thicker than 2 ML.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Dil</LastName><ForeName>J H</ForeName><Initials>JH</Initials><Affiliation>Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin, Germany. jan-hugo.dil@psi.ch</Affiliation></Author><Author ValidYN="Y"><LastName>Hülsen</LastName><ForeName>B</ForeName><Initials>B</Initials></Author><Author ValidYN="Y"><LastName>Kampen</LastName><ForeName>T U</ForeName><Initials>TU</Initials></Author><Author ValidYN="Y"><LastName>Kratzer</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Horn</LastName><ForeName>K</ForeName><Initials>K</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2010</Year><Month>03</Month><Day>12</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>J Phys Condens Matter</MedlineTA><NlmUniqueID>101165248</NlmUniqueID><ISSNLinking>0953-8984</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2010</Year><Month>3</Month><Day>12</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>3</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>3</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>3</Month><Day>11</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0953-8984(10)35726-2</ArticleId><ArticleId IdType="doi">10.1088/0953-8984/22/13/135008</ArticleId><ArticleId IdType="pubmed">21389511</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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